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PD- 91777
IRG4PH20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
n-ch an nel
Benefits
* Latest generation 4 IGBT's offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
1200 11 5.0 22 22 5.0 22 10 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
2.1 3.5 --- 40 ---
Units
C/W
g (oz)
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1
6/25/98
IRG4PH20KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 -- Temperature Coeff. of Breakdown Voltage -- 1.13 Collector-to-Emitter Saturation Voltage -- 3.17 -- 4.04 -- 2.84 Gate Threshold Voltage 3.5 -- Temperature Coeff. of Threshold Voltage -- -10 Forward Transconductance 2.3 3.5 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 2.5 -- 2.2 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V -- V IC = 11A See Fig. 2, 5 -- IC = 5.0A, TJ = 150C 6.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1mA -- S VCE = 100V, IC = 5.0A 250 A VGE = 0V, VCE = 1200V 1000 VGE = 0V, VCE = 1200V, TJ = 150C 2.9 V IC = 5.0A See Fig. 13 2.6 IC = 5.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 50 -- 30 -- TJ = 25C ns 100 150 IC = 5.0A, VCC = 800V 250 380 VGE = 15V, R G = 50 0.62 -- Energy losses include "tail" 0.30 -- mJ and diode reverse recovery 0.92 1.2 See Fig. 9,10,18 -- -- s VCC = 720V, TJ = 125C VGE = 15V, R G = 50 50 -- TJ = 150C, See Fig. 10,11,18 30 -- IC = 5.0A, VCC = 800V ns 110 -- VGE = 15V, RG = 50, 620 -- Energy losses include "tail" 1.6 -- mJ and diode reverse recovery 13 -- nH Measured 5mm from package 435 -- VGE = 0V 44 -- pF VCC = 30V See Fig. 7 8.3 -- = 1.0MHz 51 77 ns TJ = 25C See Fig. 68 102 TJ = 125C 14 IF = 5.0A 6.0 9.0 A TJ = 25C See Fig. 7.0 11 TJ = 125C 15 VR = 200V 183 274 nC TJ = 25C See Fig. 285 427 TJ = 125C 16 di/dt = 200A/s 380 -- A/s TJ = 25C See Fig. 307 -- TJ = 125C 17
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IRG4PH20KD
10
F o r b o th :
LOAD CURRENT (A)
8
D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 15 W
S q u a re w a v e : 6 0% of rate d volta ge
I
5
3
Id e a l d io d e s
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
TJ = 150 C
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
10
TJ = 150 C
1
TJ = 25 C
TJ = 25 C V CC = 50V 5s PULSE WIDTH
6 8 10 12 14
0.1 1
V GE = 15V 20s PULSE WIDTH
10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PH20KD
12 5.0
9
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH
Maximum DC Collector Current(A)
4.0
IC = 10 A
6
3.0
IC =
5A
3
IC = 2.5 A
0 25 50 75 100 125 150
TC , Case Temperature ( C)
2.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC)
1
D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PH20KD
20
800
VGE , Gate-to-Emitter Voltage (V)
VGE = Cies = Cres = Coes =
0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc
VCC = 400V I C = 11A
16
600
C, Capacitance (pF)
Cies
400
12
8
200
Coes C res
4
0 1 10 100
0 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.95
Total Switching Losses (mJ)
0.90
Total Switching Losses (mJ)
V CC = 800V 960V V GE = 15V TJ = 25 C I C = 5.0A
10
RG = 50Ohm VGE = 15V VCC =800V 960V
IC = 10 A
IC =
1
5A
IC = 2.5 A
0.85
0.80 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RGR,GGate Resistance (Ohm) , Gate Resistance ( )
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PH20KD
4.0
Total Switching Losses (mJ)
RG TJ VCC 3.2 VGE
= 5.0Ohm = 150 C = 960V 800V = 15V
100
VGE = 20V T J = 125 o C
2.4
I C, Collector Current (A)
10
1.6
0.8
0.0 0 2 4 6 8 10
SAFE OPERATING AREA
1 1 10 100 1000 10000
I C , Collector Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
10
TJ = 1 5 0 C TJ = 1 2 5 C TJ = 2 5 C
1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
F o rward V olta ge Drop - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4PH20KD
100 100
I F = 2 .5 A
80
I F = 1 0A I F = 5 .0A
60
IIRRM - ( A )
trr- ( ns)
10
40
I F = 10A I F = 5.0 A
I F = 2.5 A
20
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
0 100 1000 1 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
d i f /dt - (A /s)
1000
d i f /d t - (A / s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
800
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
di(rec)M/dt - ( A/s)
I F = 2.5 A I F = 1 0A
1000
QIRR - ( nC )
600
I F = 10 A I F = 5.0 A I F = 2.5 A
400
I F = 5.0A
200
0 100
di f /dt - (A /s)
1000
100 100
1000
di f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4PH20KD
Same ty pe device as D .U.T.
90%
80% of Vce
430F D .U .T.
Vge VC 90%
10%
t d(off)
10% IC 5% t d(on)
tr Eon E ts = (Eon +Eoff )
tf t=5s Eoff
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d id d t t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4PH20KD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0F 100V Vc*
D.U.T.
RL= 0 - 960V
960V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4PH20KD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Case Outline - TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 )
-A5 .5 0 (.2 17 )
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
M
DBM
5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4
NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5.5 0 (.2 1 7) 4.5 0 (.1 7 7)
-C-
LEAD 1234-
A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R
*
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
*
3X C AS
2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER
3X
1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)
D im e n s io n s in M illim e te rs a n d (In c h e s )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 6/98
10
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